The resistance growth equipment for large-sized and high-quality silicon carbide (SiC) crystals has the characteristics of high temperature field control accuracy, high crystal preparation efficiency and quality, and can achieve efficient, stable, and low defect growth of SiC crystals. This is a major equipment that can promote the future layout and competitiveness of China's third-generation semiconductor industry.

The implementation of this project will provide important guarantees for the development of third-generation semiconductors in China's strategic emerging industries, and is conducive to promoting the in-depth application of third-generation semiconductors in emerging industries such as 5G communication, RF devices, new energy vehicles, smart grids, and rail transit, In line with the development strategy of Suzhou City's "Work Opinions on Accelerating the Cultivation of Future Industries" issued in September 2023, which includes "carrying out the preparation of single crystal substrates and epitaxial materials such as silicon carbide (SiC) and gallium nitride (GaN), promoting the research and industrialization of key components such as wide bandgap semiconductor power electronic devices and RF devices," and promoting the transformation and upgrading of Jiangsu Province's industrial structure, Establish Suzhou's leading position in the field of third-generation semiconductor technology in China.