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Resistance method equipment for large-size SiC crystal growth

UK-T6

UK-T8

Resistance heating method silicon carbide crystal growth equipment UK-T6UK-T6

1. Perfectly solving the technical difficulty of large radial temperature gradient in induction furnaces, it can achieve small radial temperature gradient and controllable axial temperature gradient, with fewer internal defects in the crystal, high yield, and good repeatability;
2. Compared with the traditional crystal growth cycle of 7-14 days, the UKING ERH SiC RV4.0 equipment has a faster crystal growth rate and the entire process can be controlled within 7 days;
3. High degree of automation, simple operation, conducive to mass production, improving crystal growth efficiency and stability.

Parameters>

6-inch resistance method silicon carbide crystal growth equipment

Resistance heating method silicon carbide crystal growth equipment UK-T8UK-T8

1. Perfectly solving the technical difficulty of large radial temperature gradient in induction furnaces, it can achieve small radial temperature gradient and controllable axial temperature gradient, with fewer internal defects in the crystal, high yield, and good repeatability;
2. Compared with the traditional crystal growth cycle of 7-14 days, the UKING ERH SiC RV1.0 equipment has a faster crystal growth rate and the entire process can be controlled within 7 days;
3. High degree of automation, simple operation, conducive to mass production, improving crystal growth efficiency and stability.

Parameters>

8-inch resistance method silicon carbide crystal growth equipment

Advantages of temperature gradient control

With years of process technology experience, Youjing Technology accurately controls the thermal field temperature to ensure that the crystal obtains the optimal temperature gradient during the growth process, improves the growth efficiency of the crystal, and significantly reduces production costs.
Advantages of seed crystal bonding

The company's unique seed crystal processing technology reduces the influence of human factors on bonding during seed crystal assembly, improves the success rate of bonding, and solves problems such as seed crystal burning through during crystal growth.
Comprehensive cost advantage

The resistance method silicon carbide crystal growth equipment developed by the company, combined with crystal growth process, ensures high raw material utilization and improves crystal thickness while ensuring quality.

UKING SOLUTIONS

Heating components

Graphite Heater
Thermal field structure

PVT graphite thermal field
Temperature gradient

Easy to adjust
Crystal growth interface

Approaching the plane
Crystal utilization rate

High
Crystal stress

Low stress
Easy to process
Improve downstream process yield
6-8 inch crystal growth

Compatible
Unit chip cost

Low

Resistance method large-size SiC crystal growth equipment products

6-inch silicon carbide crystal

8-inch silicon carbide crystal

6-inch silicon carbide crystal

Silicon carbide, as an advanced third-generation semiconductor material worldwide, has characteristics such as high thermal conductivity, strong breakdown electric field, high saturation electron drift velocity, and high bonding energy. Silicon carbide power devices have significant advantages in high voltage, high frequency, high temperature, and high-power applications.

8-inch silicon carbide crystal

The growth process of silicon carbide crystals

Silicon carbide crystal material is a wide bandgap compound semiconductor material composed of carbon and silicon elements. Its production conditions require a high temperature above 2250 ° C and a low-pressure environment close to vacuum to sublimate the solid raw material. Under the action of high temperature and concentration gradient, the carbon and silicon atoms are continuously transported to the vicinity of the seed crystal located at the top of the graphite crucible for crystal growth.

silicon carbide particles

Si+C=SiC

During the crystal growth process, the particle size and purity of silicon carbide (SiC) raw materials directly affect the crystal quality.

Seed crystal treatment

Unique seed crystal bonding technology

Adhesive bonding for seed crystals is one of the key steps in the crystal growth process. In order to obtain high-quality crystals, the company adopts a unique seed crystal treatment process to meet the requirements of high-quality crystal growth.

Uking resistance method

SiC crystal growth technology

During the crystal growth process, the reliability and stability of crystal growth are ensured by precisely controlling the thermal field temperature and atmosphere.

Silicon carbide crystal testing report

The SiC crystals grown using the UKING resistance method silicon carbide crystal growth equipment have achieved industry standards in terms of micropipe density, dislocation density, and electrical resistivity.